Building up new data-storage memory

Jun 13, 2022 (Nanowerk News) Scientists from the Institute of Industrial Science at The University of Tokyo fabricated three-dimensional vertically formed field-effect transistors to produce high-density data storage devices by ferroelectric gate insulator and atomic-layer-deposited oxide semiconductor channel (2022 IEEE Silicon Nanoelectronics Workshop, "A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD...