Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory

Feb 08, 2025 (Nanowerk News) The rapid advancement of technologies like artificial intelligence (AI) and the Internet of Things (IoT) has heightened the demand for high-speed, energy-efficient memory devices. Traditional memory technologies often struggle to balance performance with power consumption. Spintronic devices, which leverage electron spin rather than charge, present...